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PDF BUZ211 Data sheet ( Hoja de datos )
| Número de pieza | BUZ211 | |
| Descripción | High Voltage Power MOSFET N-Channel | |
| Fabricantes | Semiconductor Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ211 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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U.comPRODUCT SPECIFICATIONS
et4SEMICONDUCTOR TECHNOLOGY, INC.
e3131 S. E. JAY STREET, STUART, FL 34997
hPH: (561) 283-4500 FAX: (561) 286-8914
taSWebsite: http://www.semi-tech-inc.com
aCASE OUTLINE: TO-204AA (TO-3)
.D HIGH VOLTAGE POWER MOSFET
w N-CHANNEL
wwABSOLUTE MAXIMUM RATING:
mDrain – Source Voltage
oDrain – Gate Voltage
.cDrain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
UPower Dissipation
t4Inductive Current
Operating and Storage Temperature
eLead Temperature From Case
VDSS
VDGR
ID
ID M
VGS
PD
IL
TJ & Tstg
TL
heELECTRICAL CHARACTERISTICS TA @ 25°C
Parameters
Symbol Test Conditions
SDrain Source
Breakdown Voltage
BVDSS VGS = 0V, ID = 0.25mA
taGate Threshold Voltage VGS(th) VGS = VDS, ID = 1.0mA
aGate – Body Leakage
Current
.DZero Gate Voltage
Drain Current
wOn State Drain Current
IGSS
IDSS
ID(on)
VGS = 20V, VDS = 0V
VDS = 500V, VGS = 0V,
VDS = 500V, VGS = 0V, TJ = 125°C
wDrain Source On-
Resistance
w mForward
.coTransconductance
Drain-Source On
UVoltage
t4Drain-Source-On
eVoltage
heInput Capacitance
rDS(on) VGS = 10V, ID = 6.5A
gFS
VDS = ≥2V = ID = RDS(ON)MAX, ID = 6.5A
VDS(on)
VDS(on)
Ciss
taSOutput Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1 MHz
.DaReverse Transfer
wwwCapacitance
Crss
TYPE: BUZ211
500
500
9.0
36
±20
125
-55 to +150
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min Typ Max Unit
500 Vdc
2.1 4.0 Vdc
100 nA
0.25 mA
1.0 mA
Adc
0.8 Ohms
2.7 mhos
Vdc
Vdc
4900 pF
400 pF
170 pF
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUZ211.PDF ] | |
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