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79C2040 Schematic ( PDF Datasheet ) - Maxwell Technologies

Teilenummer 79C2040
Beschreibung 20 Megabit (512K x 40-Bit) EEPROM MCM
Hersteller Maxwell Technologies
Logo Maxwell Technologies Logo 




Gesamt 17 Seiten
79C2040 Datasheet, Funktion
79C2040
20 Megabit (512K x 40-Bit)
EEPROM MCM
FEATURES:
512k x 40-bit EEPROM MCM
• RAD-PAK® radiation-hardened against natural
• space radiation
• Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
• Excellent Single event effects
- SELTH > 120 MeV/mg/cm2
- SEU > 90 MeV/mg/cm2 read mode
- SEU = 18 MeV/mg/cm2 write mode
• High endurance
- 10,000 cycles/byte (Page Programming Mode)
- 10 year data retention
• Page Write Mode: 128 Dword Page
• High Speed:
- 150 and 200 ns maximum access times
• Automatic programming
- 10 ms automatic Page/Dword write
• Low power dissipation
- 375 mW/MHz active current
-3. 2 mW standby current
Logic Diagram
DESCRIPTION:
Maxwell Technologies’ 79C2040 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented radiation-hardened RAD-PAK® MCM packaging
technology, the 79C2040 is the first radiation-hardened 20
megabit MCM EEPROM for space application. The 79C2040
uses twenty 1 Megabit high speed CMOS die to yield a 20
megabit product. The 79C2040 is capable of in-system electri-
cal byte and page programmability. It has a 128 word page
programming function to make the erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C2040, hardware data protection is provided with the
RES pin, in addition to noise protection on the WE signal and
write inhibit on power on and off. Software data protection is
implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K
04.20.05Rev 1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2005 Maxwell Technologies
All rights reserved.






79C2040 Datasheet, Funktion
20 Megabit (512 x 40-Bit) EEPROM MCM
79C2040
PARAMETER
TABLE 7. 79C2040 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
SYMBOL
SUBGROUPS
MIN 1
MAX
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
-200
9, 10, 11
tCW
250
350
tWP
250
350
--
--
--
--
Address Hold Time
-150
-200
tAH 9, 10, 11
150
200
--
--
Data Setup Time
-150
-200
tDS 9, 10, 11
100
150
--
--
Data Hold Time
-150
-200
tDH 9, 10, 11
10
10
--
--
Chip Enable Hold Time (WE controlled)
-150
-200
tCH 9, 10, 11
0
0
--
--
Write Enable to Write Setup Time (CE controlled)
-150
-200
tWS 9, 10, 11
0
0
--
--
Write Enable Hold Time (CE controlled)
-150
-200
tWH 9, 10, 11
0
0
--
--
Output Enable to Write Setup Time
-150
-200
tOES 9, 10, 11
0
0
--
--
Output Enable Hold Time
-150
-200
tOEH 9, 10, 11
0
0
--
--
Write Cycle Time 2
-150
-200
tWC 9, 10, 11
--
--
10
10
Data Latch Time
-150
-200
tDL 9, 10, 11
300
400
--
--
Byte Load Window
-150
-200
tBL 9, 10, 11
100
200
--
--
Byte Load Cycle
-150
-200
tBLC 9, 10, 11
.55
.95
30
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
µs
µs
04.20.05 Rev 1
All data sheets are subject to change without notice 6
©2005 Maxwell Technologies
All rights reserved

6 Page









79C2040 pdf, datenblatt
20 Megabit (512 x 40-Bit) EEPROM MCM
79C2040
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state.
RES Signal
When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by
keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its
width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control
pins.
20ns
04.20.05 Rev 1
All data sheets are subject to change without notice 12
©2005 Maxwell Technologies
All rights reserved

12 Page





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