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PDF MRF21045LSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF21045LSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2-
f1 = 2135
carrier W-
MHz, f2 =
C2D14M5AMPHezrf,oCrmhaannnceelfBoraVndDwD i=dt2h8=V3o.l8ts4,
MIDHQz=,
500
mA,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — - 37.5 dBc
ACPR — - 41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF21045LR3
MRF21045LSR3
2170 MHz, 45 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21045LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
105
0.60
- 65 to +150
200
Class
1 (Minimum)
M2 (Minimum)
Max
1.65
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 9
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21045LR3 MRF21045LSR3
1
1 page  
Freescale Semiconductor, Inc.
R1
B1 R3
C2
R2 C4 C3
C5
C1
WB1
C8
C7
L1
C10 R4
C9
C11
C6
WB2
MRF21045
Figure 2. MRF21045LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
For More Information On This Product,
Go to: www.freescale.com
5
5 Page 
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
SEE NOTE 4
2X K
N (LID)
ccc M T A M B M
E
G
1
3
2X Q
bbb M T B M A M
B
B
2
2X D
bbb M T A M B M
ccc M T A M B M
R (LID)
CF
aaa M T A M B M
M
(INSULATOR)
AA
T
SEATING
PLANE
S
(INSULATOR)
aaa M T A M B M
CASE 465E - 04
ISSUE E
NI - 400
MRF21045LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .795 .805 20.19 20.44
B .380 .390 9.65 9.9
C .125 .163 3.17 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
G .600 BSC
15.24 BSC
H .057 .067 1.45 1.7
K .092 .122 2.33 3.1
M .395 .405
10 10.3
N .395 .405
10 10.3
Q .120 .130 3.05 3.3
R .395 .405
10 10.3
S .395 .405
10 10.3
H aaa .005 BSC
0.127 BSC
bbb .010 BSC
0.254 BSC
ccc .015 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X D
bbb M T A M B M
1
2
2X K
ccc M T A M B M
E N (LID) C
A
A
T
SEATING
PLANE
(FLANGE)
M (INSULATOR)
aaa M T A M B M
H
R (LID)
ccc M T A M B M
F
3
S (INSULATOR)
aaa M T A M B M
B
(FLANGE)
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .395 .405 10.03 10.29
B .395 .405 10.03 10.29
C .125 .163 3.18 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
H .057 .067 1.45 1.70
K .092 .122 2.34 3.10
M .395 .405 10.03 10.29
N .395 .405 10.03 10.29
R .395 .405 10.03 10.29
S .395 .405 10.03 10.29
aaa .005 REF
0.127 REF
bbb .010 REF
0.254 REF
ccc .015 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE C
NI - 400S
MRF21045LSR3
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
For More Information On This Product,
Go to: www.freescale.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF21045LSR3.PDF ] | |
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