|
|
PDF MRF21180R6 Data sheet ( Hoja de datos )
| Número de pieza | MRF21180R6 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF21180R6 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21180/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,
IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — - 41 dBc
• Internally Input and Output Matched, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF21180R6
2170 MHz, 170 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 04, STYLE 1
NI - 1230
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
380
2.17
- 65 to +150
200
Value (1)
0.46
Class
1 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MMoOtoTroOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21180R6
1
1 page  
Freescale Semiconductor, Inc.
C19
R4 C15C11
B1 R3
C5
C21
C14
C18
C8 C10
C22
C1 WB4
C2 R5
WB1
WB3 C4
C3
WB2
C6
B1 R2
R1 C20 C16 C12
C7 C9
C23
C17
C13
MRF21180
Rev. 4
C24
Figure 2. MRF21180 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21180R6
5
5 Page 
Freescale Semiconductor, Inc.
NOTES
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21180R6
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF21180R6.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF21180R6 | RF Power Field Effect Transistor | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |