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Teilenummer | IRL3714S |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 11 Seiten PD - 94175A
SMPS MOSFET
IRL3714
IRL3714S
IRL3714L
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
20mΩ
ID
36A
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714
D2Pak
IRL3714S
TO-262
IRL3714L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Max.
20
± 20
36
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
0.50
–––
–––
Max.
3.2
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
06/19/01
IRL3714/3714S/3714L
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
150
ID
TOP 5.9A
10A
120
BOTTOM
14A
90
60
30
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.5 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ IRL3714S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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