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Número de pieza | IRL3103D1S | |
Descripción | MOSFET & SCHOTTKY RECTIFIER | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL3103D1S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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IRL3103D1S
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Co-packaged HEXFET® Power MOSFET
D
and Schottky Diode
l Generation 5 Technology
VDSS = 30V
l Logic Level Gate Drive
l Minimize Circuit Inductance
RDS(on) = 0.014Ω
l Ideal For Synchronous Regulator Application G
ID = 64A
S
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
D 2 Pak
Max.
64
45
220
3.1
89
0.56
± 16
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
T O -26 2
Units
A
W
W
W/°C
V
°C
Units
°C/W
4/2/98
1 page 2.0
ID = 56A
1.5
IRL3103D1S
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
Fig 9. Normalized On-Resistance
Vs. Temperature
10
1 D = 0.50
0 .2 0
0 .1 0
0.0 5
0.1
0 .0 2
0 .0 1
SINGLE PULSE
(THERMA L RE S PONSE )
0.01
0.00001
0.0001
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. P ea k TJ = P D M x Z th J C + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRL3103D1S.PDF ] |
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