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PDF MRF18090A Data sheet ( Hoja de datos )
| Número de pieza | MRF18090A | |
| Descripción | LATERAL N-CHANNEL RF POWER MOSFETS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18090A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
• GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 52% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF18090A
MRF18090AS
1.80 – 1.88 GHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 465B–03, STYLE 1
(NI–880)
(MRF18090A)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465C–02, STYLE 1
(NI–880S)
(MRF18090AS)
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Class
2 (Minimum)
M3 (Minimum)
Symbol
RθJC
Max
0.7
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
© MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF18090A MRF18090AS
1
1 page  
TYPICAL CHARACTERISTICS
16
15 IDQ = 1000 mA
750 mA
14
13 500 mA
120
100
IDQ = 750 mA
f = 1880 MHz
80
60
Pin = 3.65 W
2W
12
11
10
0.1
300 mA
VDD = 26 Vdc
f = 1880 MHz
1.0 10
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
100
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
100
90
80
70
60
50
40
30
20
10
0
1.795
Pin = 3.65 W
2W
VDD = 26 Vdc
IDQ = 750 mA
1W
1.815
1.835
1.855
f, FREQUENCY (GHz)
1.875
1.895
Figure 7. Output Power versus Frequency
120
100
h
80
Pout
60
40
VDD = 26 Vdc
20 IDQ = 750 mA
f = 1880 MHz
0
0123 4
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
15
Gps
0
-5
12 -10
IRL
9
6
1.75
VDD = 26 Vdc
IDQ = 750 mA
1.80 1.85
f, FREQUENCY (MHz)
1.90
Figure 9. Wideband Gain and IRL
(at Small Signal)
-15
-20
-25
-30
1.95
60
50
40
30
20
10
0
5
MOTOROLA RF DEVICE DATA
MRF18090A MRF18090AS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18090A.PDF ] | |
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