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PDF MRF18030ALR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF18030ALR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18030A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030ALR3
N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power
• Excellent Thermal Stability
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
1.8 - 1.88 GHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF18030ALR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF18030ALSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Value
2.1
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF18030ALR3 MRF18030ALSR3
For More Information On This Product,
Go to: www.freescale.com
1
1 page  
Freescale Semiconductor, Inc.
f = 2110 MHz
f = 1710 MHz
Zload
f = 2110 MHz
f = 1710 MHz
Zsource
Zo = 25 Ω
VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW)
f
MHz
Zsource
Ω
Zload
Ω
1710
2.92 - j8.24
4.18 - j9.06
1785
3.84 - j9.75
4.59 - j9.46
1805
4.15 - j10.38
4.98 - j9.06
1840
4.04 - j10.22
6.10 - j7.63
1880
6.12 - j12.29
5.83 - j6.89
1960
6.20 - j12.29
5.55 - j6.33
1990
8.61 - j12.10
5.93 - j6.66
2110
15.19 - j11.85
3.82 - j5.33
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z source
Z load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
MRF18030ALR3 MRF18030ALSR3
For More Information On This Product,
Go to: www.freescale.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18030ALR3.PDF ] | |
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