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PDF LT1D67A Data sheet ( Hoja de datos )

Número de pieza LT1D67A
Descripción 1608 Size/ 0.8mm Thickness/ Leadless Chip LED Devices
Fabricantes ETC 
Logotipo ETC Logotipo



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Leadless Chip LED Device
LT1t67A series
LT1t67A series
1608 Size, 0.8mm Thickness,
Leadless Chip LED Devices
s Outline Dimensions
(Unit : mm)
s Radiation Diagram
(Ta=25˚C)
1.6±0.15
0.8
-20˚ 0˚ +20˚
-40˚ 100 +40˚
12
1.2
1.0
Recommended PWB pattern for soldering
Device center
0.8 0.85 0.8
80
60
-60˚ +60˚
40
-80˚ 20 +80˚
0
(0.3)
(0.3)
(0.3)
Chip side mark
1.Plating area
Resist
2.Pin connections
1 Cathode
2 Anode
1
3.Unspecified tolerance:±0.1
2
X
-20˚ 0˚ +20˚
-40˚ 100 +40˚
80
60
-60˚ +60˚
40
20
-80˚ +80˚
U type: There is Anode mark on the device because polarity faces in the
opposite direction.
0
Y
s Absolute Maximum Ratings
(Ta=25˚C)
Power dissipation Forward current Peak forward current Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
Model No. Radiation color Radiation material P
IF
IFM*1
(mA/˚C)
VR
Topr
Tstg Tsol*2
(mW) (mA)
(mA)
DC Pulse
(V)
(˚C) (˚C) (˚C)
LT1U67A
LT1P67A
LT1D67A
LT1S67A
LT1H67A
LT1E67A
LT1F67A
LT1K67A
Red(Super-luminosity) GaAlAs on GaAlAs
Red GaP
Red GaAsP on GaP
Sunset orange GaAsP on GaP
Yellow
GaAsP on GaP
Yellow-green GaP
Yellow-green(High-luminosity) GaP
Green
GaP
75
23
84
84
84
84
84
84
30
10
30
30
30
30
30
30
50 0.40 0.67 4
50 0.13 0.67 5
50 0.40 0.67 5
50 0.40 0.67 5
50 0.40 0.67 5
50 0.40 0.67 5
50 0.40 0.67 5
50 0.40 0.67 5
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
350
350
350
350
350
350
350
350
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s Electro-optical Characteristics
(Ta=25˚C)
Lens type Model No.
LT1U67A
LT1P67A
LT1D67A
Milky LT1S67A
diffusion LT1H67A
LT1E67A
LT1F67A
LT1K67A
Forward voltage
VF(V)
TYP MAX
1.85 2.5
1.9 2.3
2.0 2.8
2.0 2.8
2.0 2.8
2.1 2.8
2.1 2.8
2.1 2.8
Peak emission wavelength
λp(nm)
IF
TYP (mA)
660 20
695 5
635 20
610 20
585 20
565 20
570 20
555 20
Luminous intensity
IV(mcd) IF
TYP (mA)
29.7 20
1.3 5
8.8 20
6.9 20
8.3 20
11.0 20
19.0 20
3.8 20
Spectrum radiation bandwidth
λ(nm) IF
TYP (mA)
20 20
100 5
35 20
35 20
30 20
30 20
30 20
25 20
Reverse current
IR(µA) VR
MAX (V)
100 3
10 4
10 4
10 4
10 4
10 4
10 4
10 4
Terminal capacitance Page for
Ct(pF)
characteristics
TYP (MHZ) diagrams
25 1
55 1
20 1
15 1
35 1
35 1
35 1 ----
40 1
(Notice) ¡In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
95devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)

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LT1D67A pdf
UR series
Forward Current Derating Curve
60
50
Forward Current vs. Forward Voltage(Note)
(Ta=25˚C)
100
50
40 10
5.0
30
20 1.0
0.5
10
0
-25 0
25 50 75 85 100 125
Ambient temperature Ta(˚C)
0.1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Forward voltage VF(V)
Peak Forward Current Derating Curve
60
50
Luminous Intensity vs. Forward Current(Note)
1000
(Ta=25˚C)
500
200
40 100
50
30
20
20
10
0
-25 0 25 50 75 85 100 125
Ambient temperature Ta(˚C)
10
5.0
2.0
1.0
0.1 0.2
0.5 1 2
5 10 20
Forward current IF(mA)
50
Note)Characteristics shown in diagrams are typical values. (not assurance value)
Luminous Intensity vs. Ambient Temperature(Note)
1000
(Ta=25˚C)
500
100
50
10
5.0
1.0
-20 0 20 40 60 80 100 120
Ambient temperature Ta(˚C)
Duty Ratio vs. Peak Forward Current
(Ta=25˚C)
500
200
100
50
20
10
5.0
2.0
1.0
1/50 1/20 1/10 1/5 1/2 1
Duty ratio DR

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