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PDF MRF171A Data sheet ( Hoja de datos )
| Número de pieza | MRF171A | |
| Descripción | MOSFET BROADBAND RF POWER FET | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF171A (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages from
30–200 MHz.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
• Low Crss – 8 pF @ VDS = 28 V
• Gold Top Metal
D
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
• Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) –32 dB (Typ)
G
S
Order this document
by MRF171A/D
MRF171A
45 W, 150 MHz
MOSFET BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Drain–Gate Voltage
Rating
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(ID = 50 mA, VGS = 0)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 28 V)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Min
65
—
—
Value
65
65
± 20
4.5
115
0.66
– 65 to +150
200
Max
1.52
Typ Max
80 —
— 1.0
— 1.0
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
mAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
1
1 page  
TYPICAL CHARACTERISTICS
60
50
40
30
20
VDD = 28 V
10 IDQ = 100 mA
f = 30 MHz
TONE SEPARATION = 1 kHz
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Pin, INPUT POWER (WATTS) PEP
Figure 3. Output Power versus Input Power
70
f = 100 MHz
60
150 MHz
50
200 MHz
40
30
20
10 VDD = 28 V
IDQ = 25 mA
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Pin, INPUT POWER (WATTS)
Figure 4. Output Power versus Input Power
18
f = 100 MHz
16
150 MHz
14
12
200 MHz
10
8
6
4
2
VDD = 13.5 V
IDQ = 25 mA
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Pin, INPUT POWER (WATTS)
Figure 5. Output Power versus Input Power
70
60
Pin = 2.0 W
50
40 1.0 W
30 0.3 W
20
10 IDQ = 25 mA
f = 150 MHz
0
12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
REV 2
5
70
60 Pin = 1.0 W
50
0.5 W
40
30 0.1 W
20
10 IDQ = 25 mA
f = 100 MHz
0
12 14 16 18 20 22 24 26 28
VDD, DRAIN SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
80
70 Pin = 4.0 W
60 3.0 W
50 2.0 W
40
30
20
10 IDQ = 25 mA
f = 200 MHz
0
12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
5 Page 
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁTable 2. Common Source S–Parameters (VDS = 28 V, ID = 0.5 A) (continued)
f |S11|
φ |S21|
φ |S12|
φ |S22|
φ
MHz
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ360
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ370
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ380
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ390
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ400
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ410
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ420
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ430
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ440
450
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ460
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ470
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ480
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ490
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ500
0.859
0.863
0.864
0.867
0.869
0.872
0.876
0.877
0.879
0.882
0.884
0.885
0.885
0.886
0.887
–179
–179
–179
–179
–180
–180
180
179
179
179
178
178
178
177
177
1.25
1.18
1.15
1.12
1.07
1.05
1.00
0.95
0.93
0.91
0.88
0.84
0.83
0.81
0.80
42
0.030
54
0.872
–178
39
0.030
55
0.886
–178
38
0.031
55
0.864
–178
39
0.032
57
0.862
–179
37
0.032
60
0.853
–177
35
0.035
60
0.898
–179
34
0.036
60
0.889
180
35
0.037
62
0.884
–179
34
0.038
64
0.902
–179
32
0.039
65
0.901
–180
32
0.041
64
0.922
179
32
0.040
66
0.877
179
30
0.042
66
0.892
179
29
0.044
68
0.891
179
28
0.045
68
0.900
178
REV 2
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF171A.PDF ] | |
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