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PDF MR27V801D Data sheet ( Hoja de datos )

Número de pieza MR27V801D
Descripción One Time PROM
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¡ Semiconductor
MR27V801D
1,048,576-Word x 8-Bit One Time PROM
1A
DESCRIPTION
The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576
word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.
Since the MR27V801D operates asynchronously , external clocks are not required , making this
device easy-to-use. The MR27V801D is suitable as large-capacity fixed memory for microcomputers
and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered
in 32-pin DIP, 32-pin SOP or 32-pin TSOP packages.
FEATURES
• 1,048,576 word x 8bit
• Single +3V-3.3V power supply
• Access time
100ns access time (Vcc=+3V)
80ns access time (Vcc=+3.3V)
• Input / Output TTL compatible
• Three-state output
• Packages
32-pin plastic DIP (DIP32-P-600-2.54)
(Product name : MR27V801DRA)
32-pin plastic SOP (SOP32-P-525-1.27-K) (Product name : MR27V801DMA)
32-pin plastic TSOP (TSOP I 32-P-814-0.50-K) (Product name : MR27V801DTA)
November 1999
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MR27V801D pdf
MR27V801D
ELECTRICAL CHARACTERISTICS (Read operation)
DC Characteristics 1
Parameter
Input leakage current
Output leakage current
VCC power supply current
(Standby)
VCC power supply current
(Read)
VPP power supply current
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
Symbol
Condition
ILI
ILO
ICCSC
ICCST
VI=0 to Vcc
VO=0 to Vcc
CE=VCC
CE=VIH
ICCA CE=VIL,OE/VPP=VIH
tc=100ns
IPP OE/VPP=VCC
VIH -
VIL -
VOH
VOL
IOH=-400µA
IOL=2.1mA
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
(VCC=3V±0.3V, Ta=0 to 70°C)
Min. Typ. Max. Unit
- - 10 µA
- - 10 µA
- - 50 µA
- - 1 mA
-
-
2.2
-0.5**
2.4
-
- 25 mA
- 10 µA
- VCC+0.5* V
- 0.6 V
-- V
- 0.4 V
DC Characteristics 2
Parameter
Input leakage current
Output leakage current
VCC power supply current
(Standby)
VCC power supply current
(Read)
VPP power supply current
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
Symbol
Condition
ILI
ILO
ICCSC
ICCST
VI=0 to Vcc
VO=0 to Vcc
CE=VCC
CE=VIH
ICCA CE=VIL,OE/VPP=VIH
tc=80ns
IPP
VIH
VIL
VOH
VOL
OE/VPP=VCC
-
-
IOH=-400µA
IOL=2.1mA
(VCC=3.3V±0.3V, Ta=0 to 70°C)
Min. Typ. Max. Unit
- - 10 µA
- - 10 µA
- - 50 µA
- - 1 mA
-
-
2.2
-0.5**
2.4
-
- 30 mA
- 10 µA
- VCC+0.5* V
- 0.6 V
--
V
- 0.4 V
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
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