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PDF MSA-1100 Data sheet ( Hoja de datos )
| Número de pieza | MSA-1100 | |
| Descripción | Cascadable Silicon Bipolar MMIC Amplifier | |
| Fabricantes | Hewlett-Packard | |
| Logotipo |  |
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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1100
Features
• High Dynamic Range
Cascadable 50␣ Ω or 75␣ Ω
Gain Block
• 3 dB Bandwidth:
50␣ MHzto1.6␣ GHz
• 17.5 dBm Typical P1dB at
0.5␣ GHz
• 12␣ dB Typical 50␣ Ω Gain at
0.5␣ GHz
• 3.5␣ dB Typical Noise Figure
at 0.5␣ GHz
Description
The MSA-1100 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for high dynamic range
in either 50 or 75␣ Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
Chip Outline[1]
3
5
2
14
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a
200␣ pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.[1]
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
Typical Biasing Configuration
C Fbk
R bias (Required)
VCC ≥ 8 V
RFC (Optional)
4
C block
C block
3
IN 1 MSA
2 Vd = 5.5 V
OUT
5965-9555E
6-450
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MSA-1100.PDF ] | |
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