STE36N50-DA Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer	STE36N50-DA
Beschreibung	N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
Hersteller	ST Microelectronics
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Gesamt 9 Seiten STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA VDSS 500 V R DS( on) < 0.14 Ω ID 36 A s LOW GATE CHARGE MOSFET s TURBOSWITCH DIODE INCORPORATED s HIGH CURRENT POWER MODULE s AVALANCHE RUGGED TECHNOLOGY s VERY LARGE SOA - LARGE PEAK POWER CAPABILITY s EASY TO MOUNT s EXTREMELY LOW Rth JUNCTION TO CASE s VERY LOW DRAIN TO CASE CAPACITANCE s VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) s ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) INDUSTRIAL APPLICATIONS: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DK) 1 2 4 3 ISOTOP INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-Source Voltage (VGS = 0) VDG R Drain-Gate Voltage (RGS = 20 kΩ) VGS Gate-Source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Tstg Storage Temperature Tj Max. Operating Junction Temperature VISO Insulation Withstand Voltage (AC-RMS) (•) Pulse width limited by safe operating area September 1994 Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500 Unit V V V A A A W W /o C oC oC V 1/9 STE36N50-DA Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 6/9 6 Page
Seiten	Gesamt 9 Seiten
PDF Download	[ STE36N50-DA Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
STE36N50-DA	N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package	ST Microelectronics
STE36N50-DK	N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package	ST Microelectronics

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