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PDF STE38NB50F Data sheet ( Hoja de datos )

Número de pieza STE38NB50F
Descripción N - CHANNEL PowerMESH MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STE38NB50F Hoja de datos, Descripción, Manual

® STE38NB50F
N - CHANNEL 500V - 0.11 - 38A - ISOTOP
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STE38NB50F
500 V < 0.14 38 A
s TYPICAL RDS(on) = 0.11
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1999
Value
Un it
500 V
500 V
± 30
V
38 A
24 A
152 A
400 W
3.2 W /o C
4 .5
-65 to 150
150
( 1) ISD 38 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/8

1 page




STE38NB50F pdf
Normalized Gate Threshold Voltage vs
Temperature
STE38NB50F
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

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