STE38NB50F Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer	STE38NB50F
Beschreibung	N - CHANNEL PowerMESH MOSFET
Hersteller	ST Microelectronics
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Gesamt 8 Seiten ® STE38NB50F N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET TYPE V DSS RDS(on) ID STE38NB50F 500 V < 0.14 Ω 38 A s TYPICAL RDS(on) = 0.11 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstand- ing performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter VDS V DGR VGS ID ID Drain-source Volt age (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC IDM(•) Ptot Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Ts tg Storage T emperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area December 1999 Value Un it 500 V 500 V ± 30 V 38 A 24 A 152 A 400 W 3.2 W /o C 4 .5 -65 to 150 150 ( 1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V/ns oC oC 1/8 STE38NB50F Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 6 Page
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Teilenummer	Beschreibung	Hersteller
STE38NB50	N - CHANNEL PowerMESH MOSFET	ST Microelectronics
STE38NB50F	N - CHANNEL PowerMESH MOSFET	ST Microelectronics

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