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Teilenummer | STS2DNFS30L |
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Beschreibung | N-CHANNEL POWER MOSFET | |
Hersteller | ST Microelectronics | |
Logo | ![]() |
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Gesamt 6 Seiten ![]() STS2DNFS30L
N-CHANNEL 30V - 0.09Ω - 3A SO-8
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30 V
< 0.11 Ω
SCHOTTKY
IF(AV)
VRRM
1 A 30 V
ID
3A
VF(MAX)
0.46 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRSM
dv/dt
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
August 2001
TL = 135°C
δ = 0.5
tp = 10 ms
Sinusoidal
tp = 100 µs
Value
30
30
± 15
3
1.9
12
2
Value
30
7
1
45
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
1/6
![]() ![]() STS2DNFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
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6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ STS2DNFS30L Schematic.PDF ] |
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