STS2DPFS20V Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer	STS2DPFS20V
Beschreibung	N-CHANNEL POWER MOSFET
Hersteller	ST Microelectronics
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Gesamt 8 Seiten STS2DPFS20V P-CHANNEL 20V - 0.14 Ω - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS MOSFET VDSS RDS(on) 20 V < 0.20Ω (@4.5V) < 0.25Ω (@2.7V) SCHOTTKY IF(AV) VRRM 3 A 30 V ID 2.5 A VF(MAX) 0.51 V DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Dain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kW) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM(•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Value 20 20 ± 12 2.5 1.58 10 2 SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value VRRM Repetitive Peak Reverse Voltage 30 IF(RMS) RMS Forward Curren 20 IF(AV) Average Forward Current TL=125 oC δ =0.5 3 IFSM Surge Non Repetitive Forward Current tp= 10 ms Sinusoidal 75 IRSM Non Repetitive Peak Reverse Current tp=100 µs 1 dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed November 2002 . Unit V V V A A A W Unit V A A A A V/µs 1/8 STS2DPFS20V Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 6 Page
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Teilenummer	Beschreibung	Hersteller
STS2DPFS20V	N-CHANNEL POWER MOSFET	ST Microelectronics

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