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1N23WG Schematic ( PDF Datasheet ) - Advanced Semiconductor

Teilenummer 1N23WG
Beschreibung SILICON MIXER DIODE
Hersteller Advanced Semiconductor
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1N23WG Datasheet, Funktion
1N23WG
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WG is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
High burnout resistance
Low noise figure
Hermetically sealed package
Matched pairs available by adding
suffix “M” or “MR” for matched forward
and reverse
MAXIMUM RATINGS
IF 20 mA
VR 1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ -55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 23
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
NF
F = 9375 MHz
RL = 100
Plo = 1.0 mW
IF = 30 MHz
NFif = 1.5 dB
VSWR
Z
IF
frange
RL = 22
f = 1000 Hz
MINIMUM TYPICAL
335
8.0
MAXIM
6.5
1.3
465
12.4
UNITS
dB
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1





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