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STS2320 Schematic ( PDF Datasheet ) - ETC
| Teilenummer | STS2320 |
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| Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
| Hersteller | ETC | |
| Logo |  |
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Gesamt 7 Seiten 
STS2320
SamHop Microelectronics Corp.
Oct .29 2004 V1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
20V
ID
3.6A
RDS(ON) ( m W ) Max
45@ VGS = 4.5V
65@ VGS =2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
SOT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @TJ=25 C
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
10
3.6
14
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RthJA
100
C/W
1
 
STS2320
A
G
L
F
BC
H
E
D (TYP.)
M
J
I
F
G
I
J
L
M
6
6 Page | ||
| Seiten | Gesamt 7 Seiten | |
| PDF Download | [ STS2320 Schematic.PDF ] | |
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