STS25NH3LL Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer	STS25NH3LL
Beschreibung	N-CHANNEL POWER MOSFET
Hersteller	ST Microelectronics
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Gesamt 8 Seiten STS25NH3LL N-CHANNEL 30V - 0.0032 Ω - 25A SO-8 STripFET™ III MOSFET FOR DC-DC CONVERSION TYPE VDSS RDS(on) ID STS25NH3LL 30 V <0.0035 Ω 25 A s TYPICAL RDS(on) = 0.0032 Ω @ 10V s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V s CONDUCTION LOSSES REDUCED s SWITCHING LOSSES REDUCED DESCRIPTION The STS25NH3LL utilizes the latest advanced design rules of ST's propetary STripFET™ technology. This novel 0.6µ process coupled to unique metalization techniques re alizes the most advanced low voltage MOSFET in SO-8 ever produced. It is therefore suit able for the most demanding DC-DC converter applications where high efficiency is to be achived at high output current. APPLICATIONS s DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE s SYNCHRONOUS RECTIFIER SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM(•) Drain Current (pulsed) EAS (1) Single Pulse Avalanche Energy Ptot Total Dissipation at TC = 25°C (•) Pulse width limited by safe operating area. September 2003 . Value 30 30 ± 18 25 18 100 200 3.2 (1) Starting Tj = 25 oC ID = 12.5A VDD = 30V Unit V V V A A A mJ W 1/8 STS25NH3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 6 Page
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Teilenummer	Beschreibung	Hersteller
STS25NH3LL	N-CHANNEL POWER MOSFET	ST Microelectronics

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