STS2DNE60 Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer	STS2DNE60
Beschreibung	N-CHANNEL POWER MOSFET
Hersteller	ST Microelectronics
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Gesamt 5 Seiten ® STS2DNE60 N - CHANNEL 60V - 0.180Ω - 2A SO-8 STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STS2DNE60 60 V < 0.23 Ω 2A s TYPICAL RDS(on) = 0.18 Ω s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE PRELIMINARY DATA DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SO-8 APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VDGR VGS ID Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Single Operation Drain Current (continuous) at Tc = 100 oC Single Operation IDM(•) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Dual Operation Total Dissipation at Tc = 25 oC Sinlge Operation October 1999 Value 60 60 ± 20 2 1.3 8 2 1.6 Unit V V V A A A W W 1/5
Seiten	Gesamt 5 Seiten
PDF Download	[ STS2DNE60 Schematic.PDF ]

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Teilenummer	Beschreibung	Hersteller
STS2DNE60	N-CHANNEL POWER MOSFET	ST Microelectronics

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