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MSM6690 Schematic ( PDF Datasheet ) - OKI electronic componets

Teilenummer MSM6690
Beschreibung ROM Interface IC
Hersteller OKI electronic componets
Logo OKI electronic componets Logo 




Gesamt 8 Seiten
MSM6690 Datasheet, Funktion
¡¡SemicondSucetormiconductor
MSM6690
ROM Interface IC
MSM6690
GENERAL DESCRIPTION
The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM.
The MSM6690 contains a built-in internal address generator circuit and one external clock input
that enables contiued serial read operations. The internal address counter is automatically
incremented by one each read operation. The external serial address input allows 1,024 words
to be addressed in the X-direction, and 1,024 words in the Y-direction.
* ROM is selected through CS1, CS2 and CS3 pins.
FEATURES
• Capable of driving three devices of 1 Mbit EPROM
• Capable of driving three devices of 1 Mbit Mask ROM
• Supply voltage : Single 5 V
• Package options : 42-pin plastic DIP (DIP42-P-600) (Product name: MSM6690RS)
44-pin plastic QFP (QFP44-P-910-2K) (Product name: MSM6690GS-2K)
* Available combinations
MSM6388/6588
+
MSM6389/6587/6586
+
MSM6690
+
ROM
MSM6688/6788/6789A
+
(MSM6684/6685)
+
MSM6690
+
ROM
Note:
When driving the MSM6690 with the MSM6388 or the MSM6588, a serial register
(MSM6389, MSM6688 or MSM6586) is required.
In the case of the MSM6688, MSM6788 and MSM6789A, a playback system can be
constructed without a serial register (MSM6684 or MSM6685).






MSM6690 Datasheet, Funktion
MSM6690
ABSOLUTE MAXIMUM RATINGS
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Input Current
Output Current
Storage Temperature
Symbol
VDD
VI
VO
II
IO
TSTG
Condition
Ta = 25°C
Typical:
GND = 0 V
¡ Semiconductor
Rating
–0.3 to +7.0
–0.3 to VDD+0.3
–0.3 to VDD+0.3
–10 to +10
–20 to +20
–55 to +150
Unit
V
V
V
mA
mA
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Power Supply Voltage
Operating Temperature
Symbol
VDD
Top
Range
+3.0 to +6.0
–40 to +85
(GND = 0 V)
Unit
V
°C
ELECTRICAL CHARACTERISTICS
DC Characteristics
Parameter
Symbol
(VDD = 5.0 V ± 10%, GND = 0 V, Ta = –40 to +85°C)
Condition
Min. Typ.* Max. Unit
"H" level Input Voltage
"L" level Input Voltage
"H" level Input Current
"L" level Input Current
3-state Output Leak Current
(with open drain output)
"H" level Output Voltage
"L" level Output Voltage
Supply Current at Standby
Supply Current at Operating
VIH
CMOS level input
3.5 — VDD+0.3 V
VIL
CMOS level input
–0.3 —
1.5
V
IIH
VIH = VDD
— 0.01 10
mA
IIL
VIL = GND
–10 –0.01 —
mA
IOZH
VOH = VDD
— 0.01 10
mA
IOZL
VOL = GND
–10 –0.01 —
V OH
IOH = –5.0 mA
2.4 4.2 VDD V
V OL
IOL = 5.0 mA
GND 0.24 0.5
V
I DS
Output open VIH = VDD
VIL = GND
0.1 100 mA
I DD
——
2 mA
* Typical operation is with VDD = 5.0 V, Ta = 25°C

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