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STN4NE03L Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer STN4NE03L
Beschreibung N-CHANNEL POWER MOSFET
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 8 Seiten
STN4NE03L Datasheet, Funktion
® STN4NE03L
N - CHANNEL 30V - 0.037- 4A - SOT-223
STripFETPOWER MOSFET
TYPE
ST N4NE03L
VDSS
30 V
RDS(on)
< 0.05
ID
4A
s TYPICAL RDS(on) = 0.037
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
s POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID(*)
ID(*)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited by package
August 1998
Value
Uni t
30 V
30 V
± 15
V
4A
2.5 A
16 A
2.5
0.02
W
W/oC
6 V/ ns
-65 to 150
oC
150 oC
(1)ISD 10A, di/dt 200A/µs, VDD V(BR)DSS, Tj TjMAX
1/8






STN4NE03L Datasheet, Funktion
STN4NE03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
®

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