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DG212B Schematic ( PDF Datasheet ) - Vishay Intertechnology
| Teilenummer | DG212B |
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| Beschreibung | (DG211B / DG212B) Improved Quad CMOS Analog Switches | |
| Hersteller | Vishay Intertechnology | |
| Logo |  |
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Gesamt 8 Seiten 
DG211B/212B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
D "22-V Supply Voltage Rating
D TTL and CMOS Compatible Logic
D Low On-Resistance—rDS(on): 50 W
D Low Leakage—ID(on): 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching—tON: 120 ns
D Low Charge Injection—Q: 1 pC
BENEFITS
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Minimum Transients
D Reduced Power Consumption
D Superior to DG211/212
D Space Savings (TSSOP)
APPLICATIONS
D Industrial Instrumentation
D Test Equipment
D Communications Systems
D Disk Drives
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
DESCRIPTION
The DG211B/212B analog switches are highly improved
versions of the industry-standard DG211/212. These devices
are fabricated in Vishay Siliconix’ proprietary silicon gate
CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc. An
improved charge injection compensation design minimizes
switching transients. The DG211B and DG212B can handle
up to "22 V, and have an improved continuous current rating
of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG211B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
V–
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
Top View
16 IN2
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
9 IN3
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
TRUTH TABLE
Logic
DG211B
DG212B
0 ON OFF
1
OFF
ON
Logic “0” v 0.8 V
Logic “1” w 2.4 V
www.vishay.com S FaxBack 408-970-5600
4-1
 
DG211B/212B
Vishay Siliconix
TEST CIRCUITS
VS = +2 V
3V
+15 V
V+
SD
IN
GND
V–
RL
1 kW
VO
CL
35 pF
–15 V
VO = VS
RL
RL + rDS(on)
Logic
Input
3V
0V
Switch
Output
VO
FIGURE 2. Switching Time
50%
90%
tr <20 ns
tf <20 ns
tOFF
tON
+15 V
C
VS
Rg = 50 W
0V, 2.4 V
V+
SD
IN
GND
V– C
Off Isolation = 20 log
VS
VO
–15 V
FIGURE 3. Off Isolation
VO
RL
C +15 V
V+
VS S1 D1
Rg = 50 W
0V, 2.4 V
IN1
S2
NC
D2
0V, 2.4 V
IN2
C = RF bypass
XTALK Isolation = 20 log
VS
VO
GND
V– C
–15 V
50 W
VO
RL
FIGURE 4. Channel-to-Channel Crosstalk
Rg
Vg
3V
+15 V
V+
SD
IN
GND
V–
–15 V
www.vishay.com S FaxBack 408-970-5600
4-6
VO
CL
1000 pF
DVO
VO
INX ON
OFF
ON
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
FIGURE 5. Charge Injection
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
6 Page | ||
| Seiten | Gesamt 8 Seiten | |
| PDF Download | [ DG212B Schematic.PDF ] | |
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