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2SK1611 Schematic ( PDF Datasheet ) - Panasonic Semiconductor
| Teilenummer | 2SK1611 |
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| Beschreibung | Silicon N-Channel Power F-MOS FET | |
| Hersteller | Panasonic Semiconductor | |
| Logo |  |
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Gesamt 2 Seiten 
Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity
q VGSS: 30V guaranteed
q Low RDS(on), high-speed switching characteristic
s Applications
q High-speed switching (switching power supply, AC adaptor)
q For high-frequency power amplification
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 800 V
Gate to Source voltage
VGSS
±30
V
Drain current
DC
Pulse
ID
IDP
±3 A
±6 A
Avalanche energy capacity
EAS*
20
mJ
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
50
W
2
Channel temperature
Storage temperature
* Single pulse
Tch 150 °C
Tstg
−55 to +150
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
IDSS
IGSS
VDSS
EAS*
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
* Avalanche energy capacity test circuit
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
L = 4.5mH, ID = 3A, VDD = 50V
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 200V, RL = 100Ω
PVS
L
ID
Gate
RGS
VDS
Drain
Source
C VDD
10.0±0.2
5.5±0.2
unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.5 +0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
123
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
min typ max Unit
0.1 mA
±1 µA
800 V
20 mJ
1 5V
3.2 4
Ω
1.5 2.4
S
730 pF
90 pF
40 pF
40 ns
35 ns
105 ns
1
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| Seiten | Gesamt 2 Seiten | |
| PDF Download | [ 2SK1611 Schematic.PDF ] | |
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