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TA2123AF Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer TA2123AF
Beschreibung 1.5V Stereo Headphone Amplifier
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 20 Seiten
TA2123AF Datasheet, Funktion
TOSHIBA Bipolar Integrated Circuit Silicon Monolithic
TA2123AF
1.5V Stereo Headphone Amplifier
TA2123AF
The TA2123AF is the system amplifier IC which is developed
for playback stereo headphone equipments. It is built in dual
autoreverse preamplifiers, dual power amplifiers with bass /
treble boost function, AMS (automatic music sensor) function,
beep function, AGC for power amplifier etc.
Features
· Power amplifier stage
· In case of output coupling type, the supply current
decreases.
(builtin center amplifier switch)
Weight: 0.17g (typ.)
· Builtin bass boost function
· Builtin treble boost function
· Builtin power amplifier muting function
· Builtin input terminal for beep signal
· Builtin input capacitor for reducing buzz noise
· GV = 24dB (typ.)
· Builtin AGC circuit (in case of boost mode, this circuit operates.)
· Low supply current
(VCC = 1.3V, f = 1kHz, RL = 32, Ta = 25°C, typ.)
No Signal 0.1mW × 2 0.5mW × 2
Output coupling type
OCL type
1.5mA
2.2mA
3.0mA
4.9mA
5.0mA
8.6mA
· Preamplifier stage
· Auto-reverse compatible
· Built-in input capacitor for reducing buzz noise
· Input coupling condensor-less
· Built-in metal mode drivers
· Preamplifier muting function
· Built-in ripple filter circuit
· Built-in AMS (automatic music sensor) function (mixer amplifier and level comparator)
· Built-in power switch
· Operating supply voltage range (Ta = 25°C)
VCC (opr) = 0.95~2.2V
1 2002-10-30






TA2123AF Datasheet, Funktion
Terminal
No. Name
39 BEEP
41 MT SW
44 F / R SW
45 PRE SW
Function
Input of beep signal
This terminal receives beep
signal of a microcomputer etc.
This terminal should be set as
high impedance or “H” when
not using this function
Muting switch of power amplifier
Power amp. on: “H” level
Power amp. off: “L” level
Refer to application note 3 (2)
Forward / reverse switch
Forward: “L” level
Reverse: “H” level
Refer to application note 3 (2)
Muting switch of preamplifier
Preamp. on: “L” level
Preamp. off: “H” level
Refer to application note 3 (2)
42 PW SW
Power on / off switch
IC on: “H” level
IC off: “L” level
Refer to application note 3 (2)
43 BST SW
Boost on / off switch
BST on: OPEN / “H” level
BST off: “L” level
Refer to application note 3 (2)
46 M / N SW
47 PRE GND
Metal / normal mode switch
Metal mode: OPEN / “H” level
Normal mode: “L” level
Refer to application note 3 (2)
Power GND for power drive stage
TA2123AF
Internal Circuit
20k
39
Power amplifier
Terminal
Voltage
(V)
0.7
47k
41
42
20k
43
10k
46
0
6 2002-10-30

6 Page









TA2123AF pdf, datenblatt
TA2123AF
(4) Treble boost
The EQ terminal is synchronizes with the BST SW, and the input impedance is changed.
BST OFF: 100k(typ.)
BST ON: 1.9k(typ.)
The voltage gain increase 6 dB (typ.) at high frequency range in case that the capacitor CX is connected
between the EQ terminal and the PW NF terminal.
PW IN 28
PW NF 29
+ PWA / B
EQ30
Fig.6 Treble boost
(5) Cross talk of output coupling type
In case of output coupling mode, the cross talk is determined by resistor RL and capacitor C which are
connected with power amplifier output as shown in Fig.7.
The formula is shown below.
G (ω) = 1 / 2 [1 + jωC (RL / 2)]
CT = 20og|Gv| = 20og [1 / 2 [ 1+ (w / w0 )2 ]], ω0 = 1 / C (RL / 2)
At f = 1kHz, C1 = 220µF, RL = 32, The cross talk becomes about 33 dB.
PWA
R2
PWC
PWB
RL
+
RL
VREF
~
+
Fig.7 Cross talk of output coupling type
12 2002-10-30

12 Page





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