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Teilenummer | DV2805 |
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Beschreibung | VHF POWER MOSFET N-Channel Enhancement Mode | |
Hersteller | Advanced Semiconductor | |
Logo | ||
Gesamt 1 Seiten DV2805
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI DV2805 is Designed for
General Purpose Class A, B, or C
Power Amplifier Applications up to 175
MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
• PG = 04 dB Typ. at 5.0 W /175MHz
• 20-35 V operation
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID 0.5 A
V(BR)DSS
80 V
VDGR
80 V
VGS ± 20 V
PDISS
10 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 17.6 °C/W
.112 x 45°
B
S
A
D
Ø.125 NOM.
FULL R
J
.125
GS
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
V(BR)DSS
VGS = 0 V
IDS = 5.0 mA
IDSS VDS = 28 V
VGS = 0 V
IGSS
VDS = 0 V
VGS = 40 V
VGS VDS = 10 V
ID = 25 mA
GM VDS = 0.28 V
ID = 150 mA
MINIMUM TYPICAL MAXIMUM
80 --- ---
--- --- 2.0
--- --- 1.0
1.0 --- 6.0
50 --- ---
UNITS
V
mA
µA
V
mmho
Ciss
Coss
Crss
VGS = 28 V
VDS = 0 V
F = 1.0 MHz
22 15
17 15 pF
3.0 2.0
PG VDD = 28 V
IDQ = 25 mA
POUT = 5.0 W
9.0
ηD f = 175 MHz
55
10
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ DV2805 Schematic.PDF ] |
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