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PDF STW20NM60 Data sheet ( Hoja de datos )
| Número de pieza | STW20NM60 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB20NM60-1 - STP20NM60FP
STB20NM60 - STP20NM60 - STW20NM60
N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK
MDmesh™ Power MOSFET
Features
Type
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
VDSS
600V
600V
600V
600V
600V
RDS(on)
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
ID
20A
20A
20A
20A
20A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Table 1. Device summary
Part number
STP20NM60
STP20NM60FP
STB20NM60T4
STB20NM60-1
STW20NM60
Marking
P20NM60
P20NM60FP
B20NM60
B20NM60-1
W20NM60
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
123
I²PAK
Figure 1. Internal schematic diagram
Package
TO-220
TO-220FP
D²PAK
I²PAK
TO-247
Packaging
Tube
Tube
Tape & reel
Tube
Tube
August 2007
Rev 12
1/18
www.st.com
18
1 page  
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
25 ns
20 ns
42 ns
11 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
VDD = 60 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
Tj = 150°C, VDD = 60 V
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
390
5
25
510
6.5
26
Max Unit
20 A
80 A
1.5 V
ns
µC
A
ns
µC
A
5/18
5 Page 
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Package mechanical data
DIM.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
øP
øR
S
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA
mm.
TYP
5.45
18.50
5.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STW20NM60.PDF ] | |
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