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Número de pieza | MBM200JS12EW | |
Descripción | IGBT POWER MODULE | |
Fabricantes | Hitachi | |
Logotipo | ||
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No Preview Available ! IGBT MODULE
MBM200JS12EW
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
4-φ6.5
3-M6
108
93
20 20 20
Unit in mm
4-Fast-on
Terminal
#110
C2E1
E2
G2
E2
C1
E1
G1
28 28
47
φ0.8
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item
Symbol
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
DC
Forward Current
1ms
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals
Mounting
VCES
VGES
IC
ICp
IF
IFM
Pc
Tj
Tstg
VISO
-
-
Notes:(1)RMS Current of Diode 60Arms max.
(2)(3)Recommended Value 2.45N.m(25kgf.cm)
Weight: 470 (g)
Unit
V
V
A
A
W
°C
°C
VRMS
N.m
(kgf.cm)
C2E1
E2
G2
E2
C1
E1
G1
TERMINALS
MBM200JS12EW
1,200
±20
200
400
200 (1)
400
1,470
-40 ~ +150
-40 ~ +125
2,500(AC 1 minute)
2.94(30)
(2)
2.94(30)
(3)
CHARACTERISTICS (Tc=25°C )
Item
Collector Emitter Cut-Off Current
Symbol Unit Min. Typ. Max.
Test Conditions
I CES
mA
-
- 1.0 VCE=1,200V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
- ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Times Turn On Time
Fall Time
VCE(sat)
VGE(TO)
Cies
tr
ton
tf
V
V
pF
ms
- 2.7 3.4 IC=200A,VGE=15V
- - 10 VCE=5V, IC =200mA
- 21,000 - VCE=10V,VGE=0V,f=1MHz
- 0.2 0.35 VCC=600V
- 0.35 0.55 RL=3.0W
- 0.25 0.35 RG=6.2W
(4)
Turn Off Time
toff
- 0.55 1.0 VGE=±15V
Peak Forward Voltage Drop
VFM V - 2.5 3.5 IF=200A,VGE=0V
Reverse Recovery Time
Thermal Impedance IGBT
FWD
trr
Rth(j-c)
Rth(j-c)
ms
°C/W
-
-
-
- 0.35 IF=200A,VGE=-10V, di/dt=300A/ms
- 0.085
Junction to case
- 0.22
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
PDE-M200JS12EW-0
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBM200JS12EW.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBM200JS12EW | IGBT POWER MODULE | Hitachi |
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