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76137S Schematic ( PDF Datasheet ) - ETC

Teilenummer 76137S
Beschreibung HUF76107D
Hersteller ETC
Logo ETC Logo 




Gesamt 11 Seiten
76137S Datasheet, Funktion
Data Sheet
HUF76107D3, HUF76107D3S
January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low voltage bus switches, and power management
in portable and battery operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107D3
TO-251AA
76107D
HUF76107D3S
TO-252AA
76107D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.052
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
Free Datasheet http://www.datasheet4u.com/






76137S Datasheet, Funktion
HUF76107D3, HUF76107D3S
Typical Performance Curves Unless otherwise specified (Continued)
600
VGS = 0V, f = 1MHz
500
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
400
CISS
300
200
100
0
0
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VDD = 15V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 20A
ID = 12A
ID = 5A
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
100
VGS = 4.5V, VDD = 15V, ID = 10A, RL= 1.50Ω
80
tr
60
td(OFF) tf
40
20
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01
100
VGS = 10V, VDD = 15V, ID = 20A, RL= 0.75
80 td(OFF)
60 tr
tf
40
20 td(ON)
0
0 10
20 30 40
50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1

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