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PDF PM300DSA060 Data sheet ( Hoja de datos )
| Número de pieza | PM300DSA060 | |
| Descripción | USING INTELLIGENT POWER MODULES | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
6.0 Introduction to Intelligent
Power Modules (IPM)
Mitsubishi Intelligent Power Mod-
ules (IPMs) are advanced hybrid
power devices that combine high
speed, low loss IGBTs with opti-
mized gate drive and protection cir-
cuitry. Highly effective over-current
and short-circuit protection is real-
ized through the use of advanced
current sense IGBT chips that al-
low continuous monitoring of power
device current. System reliability is
further enhanced by the IPM’s inte-
grated over temperature and under
voltage lock out protection. Com-
pact, automatically assembled In-
telligent Power Modules are de-
signed to reduce system size, cost,
and time to market. Mitsubishi
Electric introduced the first full line
of Intelligent Power Modules in No-
vember, 1991. Continuous im-
provements in power chip, packag-
ing, and control circuit technology
have lead to the IPM lineup shown
in Table 6.1.
6.0.1 Third Generation Intelli-
gent Power Modules
Mitsubishi third generation intelli-
gent power module family shown in
Table 6.1 represents the industries
most complete line of IPMs. Since
their original introduction in 1993
the series has been expanded to
include 36 types with ratings rang-
ing from 10A 600V to 800A 1200V.
The power semiconductors used in
these modules are based on the
field proven H-Series IGBT and di-
ode processes. In Table 6.1 the
third generation family has been di-
vided into two groups, the “Low
Profile Series” and “High Power
Series” based on the packaging
technology that is used. The third
generation IPM has been optimized
for minimum switching losses in or-
der to meet industry demands for
acoustically noiseless inverters
with carrier frequencies up to
20kHz. The built in gate drive and
protection has been carefully de-
signed to minimize the components
required for the user supplied inter-
face circuit.
6.0.2 V-Series High Power IPMs
The V-Series IPM was developed
in order to address newly emerging
industry requirements for higher re-
liability, lower cost and reduced
EMI. By utilizing the low inductance
packaging technology developed
for the U-Series IGBT module (de-
scribed in Section 4.1.5) combined
with an advanced super soft free-
wheel diode and optimized gate
drive and protection circuits the V-
Series IPM family achieves im-
proved performance at reduced
cost. The detailed descriptions of
IPM operation and interface re-
quirements presented in Sections
6.1 through 6.8 apply to V-Series
as well as third generation IPMs.
The only exception being that V-
Series IPMs have a unified short
circuit protection function that takes
the place of the separate short cir-
cuit and over current functions de-
scribed in Sections 6.4.4 and 6.4.5.
The unified protection was made
Table 6.1 Mitsubishi Intelligent Power Modules
Type Number Amps Power Circuit
Third Generation Low Profile Series - 600V
PM10CSJ060 10 Six IGBTs
PM15CSJ060 15 Six IGBTs
PM20CSJ060 20 Six IGBTs
PM30CSJ060 30 Six IGBTs
PM50RSK060 50 Six IGBTs + Brake ckt.
PM75RSK060 75 Six IGBTs + Brake ckt.
Third Generation Low Profile Series - 1200V
PM10CZF120 10 Six IGBTs
PM10RSH120 10 Six IGBTs + Brake ckt.
PM15CZF120 15 Six IGBTs
PM15RSH120 15 Six IGBTs + Brake ckt.
PM25RSK120 25 Six IGBTs + Brake ckt.
Third Generation High Power Series - 600V
PM75RSA060 75 Six IGBTs + Brake ckt.
PM100CSA060 100 Six IGBTs
PM100RSA060 100 Six IGBTs + Brake ckt.
PM150CSA060 150 Six IGBTs
PM150RSA060 150 Six IGBTs + Brake ckt.
PM200CSA060 200 Six IGBTs
PM200RSA060 200 Six IGBTs + Brake ckt.
PM200DSA060 200 Two IGBTs: Half Bridge
PM300DSA060 300 Two IGBTs: Half Bridge
PM400DAS060 400 Two IGBTs: Half Bridge
PM600DSA060 600 Two IGBTs: Half Bridge
PM800HSA060 800 One IGBT
Type Number Amps Power Circuit
Third Generation High Power Series - 1200V
PM25RSB120 25 Six IGBTs + Brake ckt.
PM50RSA120 50 Six IGBTs + Brake ckt.
PM75CSA120 75 Six IGBTs
PM75DSA120 75 Two IGBTs: Half Bridge
PM100CSA120 100 Six IGBTs
PM100DSA120 100 Two IGBTs: Half Bridge
PM150DSA120 150 Two IGBTs: Half Bridge
PM200DSA120 200 Two IGBTs: Half Bridge
PM300DSA120 300 Two IGBTs: Half Bridge
PM400HSA120 400 Two IGBTs: Half Bridge
PM600HSA120 600 One IGBT
PM800HSA120 800 One IGBT
V-Series High Power - 600V
PM75RVA060 75 Six IGBTs + Brake ckt.
PM100CVA060 100 Six IGBTs
PM150CVA060 150 Six IGBTs
PM200CVA060 200 Six IGBTs
PM300CVA060 300 Six IGBTs
PM400DVA060 400 Two IGBTs: Half Bridge
PM600DVA060 600 Two IGBTs: Half Bridge
V-Series High Power - 1200V
PM50RVA120 50 Six IGBTs + Brake ckt.
PM75CVA120 75 Six IGBTs
PM100CVA120 100 Six IGBTs
PM150CVA120 150 Six IGBTs
PM200DVA120 200 Two IGBTs: Half Bridge
PM300DVA120 300 Two IGBTs: Half Bridge
Sep.1998
1 page  
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
6.2.1 Maximum Ratings
Symbol
Parameter
Inverter Part
VCC
VCES
±IC
±ICP
PC
Tj
Supply Voltage
Collector-Emitter Voltage
Collector-Current
Collector-Current (peak)
Collector Dissipation
Junction Temperature
Brake Part
VR(DC)
IF
FWDi Reverse Voltage
FWDi Forward Current
Control Part
VD
VCIN
VFO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Total System
VCC(prot)
Supply Voltage Protected
by OC & SC
TC Module Case Operating
Temperature
Tstg Storage Temperature
Viso Isolation Voltage
Definition
Maximum DC bus voltage applied between P-N
Maximum off-state collector-emitter voltage at applied control input off signal
Maximum DC collector and FWDi current @ Tj ≤ 150°C
Maximum peak collector and FWDi current @ Tj ≤ 150°C
Maximum power dissipation per IGBT switch at Tj = 25°C
Range of IGBT junction temperature during operation
Maximum reverse voltage of FWDi
Maximum FWDi DC current at Tj ≤ 150°C
Maximum control supply voltage
Maximum voltage between input (I) and ground (C) pins
Maximum voltage between fault output (FO) and ground (C) pins
Maximum sink current of fault output (FO) pin
Maximum DC bus voltage applied between P-N with guaranteed OC and SC protection
Range of allowable case temperature at specified reference point during operation
Range of allowable ambient temperature without voltage or current
Maximum isolation voltage (AC 60Hz 1 min.) between baseplate and module terminals
(all main and signal terminals externally shorted together)
6.2.2 Thermal Resistance
Symbol
Rth(j-c)
Rth(c-f)
Parameter
Junction to Case
Thermal Resistance
Contact Thermal
Resistance
Definition
Maximum value of thermal resistance between junction and case per switch
Maximum value of thermal resistance between case and fin (heatsink) per IGBT/FWDi pair
with thermal grease applied according to mounting recommendations
6.2.3 Electrical Characteristics
Symbol
Parameter
Inverter and Brake Part
VCE(sat)
Collector-Emitter
Saturation Voltage
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
FWDi Forward Voltage
Turn-On Time
FWDi Recovery Time
Turn-On Crossover Time
Turn-Off Time
Turn-Off Crossover Time
Collector-Emitter Cutoff
Definition
IGBT on-state voltage at rated collector current under specified conditions
FWDi forward voltage at rated current under specified conditions
Inductive load switching times under rated conditions
(See Figure 6.10)
Collector-Emitter current in off-state at VCE = VCES under specified conditions
Sep.1998
5 Page 
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
the effect of the controlled shut-
down (for obtaining the oscillo-
graph in “A”
the internal soft shutdown was in-
tentionally deactivated). The IPM
uses actual device current mea-
surement to detect all types of over
current conditions. Even resistive
and inductive shorts to ground that
are often missed by conventional
desaturation and bus current sens-
ing protection schemes will be de-
tected by the IPMs current sense
IGBTs.
Note:
V-Series IPMs do not have an
over- current protection function.
Instead a unified short circuit pro-
tection function that has a delay
like the over current protection de-
scribed in this section is used.
Figure 6.17 Operation of Over-Current and Short-Circuit Protection
INPUT
SIGNAL
INTERNAL
GATE
VOLTAGE
(VGE)
SHORT CIRCUIT
TRIP LEVEL
OVER CIRCUIT
TRIP LEVEL
COLLECTOR
CURRENT
IFO
FAULT OUTPUT
CURRENT
toff
(OC)
thold
thold
tFO tFO
NORMAL OPERATION
FWD RECOVERY CURRENT
IGNORED BY OC PROTECTION
OVER CURRENT
FAULT AND
RECOVERY
SHORT CIRCUIT
FAULT AND
RECOVERY
NORMAL OPERATION
Figure 6.18 OC Operation of PM200DSA060 (IC: 100A/div; 100V/div; t: 1µs/div)
OC PROTECTION WITHOUT SOFT SHUTDOWN
OC PROTECTION WITH SOFT SHUTDOWN
VCE (surge)
IC
VCE IC
VCE (surge)
VCE
Sep.1998
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet PM300DSA060.PDF ] | |
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