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PDF MBR0540T1 Data sheet ( Hoja de datos )

Número de pieza MBR0540T1
Descripción SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 40 VOLTS
Fabricantes Motorola Semiconductors 
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1. MBR0540T1






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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBR0540T1/D
Advance Information
Surface Mount
Schottky Power Rectifier
MBR0540T1
SOD–123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier
metal that produces optimal forward voltage drop–reverse current tradeoff. Ideally
suited for low voltage, high frequency rectification, or as a free wheeling and polarity
protection diodes in surface mount applications where compact size and weight are
critical to the system. This package provides an alternative to the leadless 34 MELF
style package. These state–of–the–art devices have the following features:
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES
40 VOLTS
Guardring for Stress Protection
Very Low Forward Voltage
Epoxy Meets UL94, VO at 1/8
Package Designed for Optimal Automated Board Assembly
Mechanical Characteristics:
Reel Options: 3,000 per 7 inch reel / 8 mm tape
Reel Options: 10,000 per 13 inch reel / 8 mm tape
Device Marking: B4
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy Molded
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260°C max. for 10 Seconds
CASE 425–04, Style 1
SOD–123
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
DataSheet4U.com
Average Rectified Forward Current (At Rated VR, TC = 115°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115°C)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Symbol
VRRM
VRWM
VR
IO
IFRM
IFSM
Value
40
0.5
1.0
5.5
Unit
V
A
A
A
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg, TC
TJ
dv/dt
–55 to 150
–55 to 150
1,000
°C
°C
V/m s
Thermal Resistance – Junction–to–Lead (2)
Thermal Resistance – Junction–to–Ambient (3)
ELECTRICAL CHARACTERISTICS
Rtjl 118 °C/W
Rtja 206
Maximum Instantaneous Forward Voltage (1)
VF TJ = 25°C
(IF = 0.5 A)
(IF = 1 A)
0.51
0.62
Maximum Instantaneous Reverse Current
IR TJ = 25°C
(VR = 40 V)
(VR = 20 V)
20
10
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width 250 µs, Duty Cycle 2.0%.
(2) Mounted with minimum recommended pad size, PC Board FR4.
DataSheet4U(.3c)o1minch square pad size (1 X 0.5 inch for each lead) on FR4 board.
Rev 2
TJ = 100°C
0.46
0.61
TJ = 100°C
5,000
13,000
V
mA
©RMeoctotriofilea,rInDce. 1v9ic96e Data
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