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PDF MB84VA2006 Data sheet ( Hoja de datos )
| Número de pieza | MB84VA2006 | |
| Descripción | (MB84VA2006 / MB84VA2007) 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MB84VA2006 (archivo pdf) en la parte inferior de esta página. Total 29 Páginas | ||
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50107-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (× 8/× 16) FLASH MEMORY &
1M (× 8) STATIC RAM
MB84VA2006-10/MB84VA2007-10
s FEATURES
• Power supply voltage of 2.7 to 3.6 V
• High performance
100 ns maximum access time
• Operating Temperature
–20 to +85°C
— FLASH MEMORY
• Minimum 100,000 write/erase cycles
• Sector erase architecture
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VA2006: Top sector
MB84VA2007: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to "MBM29LV800TA/BA" data sheet in detailed function
— SRAM
• Power dissipation
Operating : 35 mA max.
Standby : 30 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 2.0 V to 3.6 V
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
1 page  
MB84VA2006-10/MB84VA2007-10
s FLEXIBLE SECTOR-ERASE ARCHITECTURE on FLASH MEMORY
• One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.
• Individual-sector, multiple-sector, or bulk-erase capability.
16K byte
8K byte
8K byte
32K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
(×8) (×16)
FFFFFH 7FFFFH
FC000H 7E000H
FA000H 7D000H
F8000H 7C000H
F0000H 78000H
E0000H 70000H
D0000H 68000H
C0000H 60000H
B0000H 58000H
A0000H 50000H
90000H 48000H
80000H 40000H
70000H 38000H
60000H 30000H
50000H 28000H
40000H 20000H
30000H 18000H
20000H 10000H
10000H 08000H
00000H 00000H
MB84VA2006 Sector Architecture
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
64K byte
32K byte
8K byte
8K byte
16K byte
(×8) (×16)
FFFFFH 7FFFFH
F0000H 78000H
E0000H 70000H
D0000H 68000H
C0000H 60000H
B0000H 58000H
A0000H 50000H
90000H 48000H
80000H 40000H
70000H 38000H
60000H 30000H
50000H 28000H
40000H 20000H
30000H 18000H
20000H 10000H
10000H 08000H
08000H 04000H
06000H 03000H
04000H 02000H
00000H 00000H
MB84VA2007 Sector Architecture
5
5 Page 
MB84VA2006-10/MB84VA2007-10
s DC CHARACTERISTICS
Parameter Parameter Description
Symbol
Test Conditions
Min. Typ. Max. Unit
ILI Input Leakage Current — –1.0 — +1.0 µA
ILO Output Leakage Current
—
–1.0 — +1.0 µA
Byte
— — 22
tCYCLE = 10 MHz
ICC1f
Flash VCC Active Current
(Read)
VCCf = VCC
Max., CEf = VIL
OE = VIH
Word
Byte
— — 25
mA
— — 12
tCYCLE = 5 MHz
Word
— — 15
ICC2f
Flash VCC Active Current
(Program/Erase)
VCCf = VCC Max., CEf
= VIL, OE = VIH
— — 35 mA
ICC1s
SRAM VCC Active
Current
VCCs = VCC Max.,
tCYCLE =10 MHz
—
—
40 mA
CE1s = VIL, CE2s = VIH tCYCLE = 1 MHz
—
—
12 mA
ICC2s
SRAM VCC Active
Current
CE1s = 0.2 V,
tCYCLE = 10 MHz — — 35 mA
CE2s = VCCs – 0.2 V,
WE = VCCs – 0.2 V
tCYCLE = 1 MHz
—
—
8 mA
ISB1f
Flash VCC Standby
Current
VCCf = VCC Max., CEf = VCCf ± 0.3 V
RESET = VCCf ± 0.3 V
——
5 µA
ISB2f
Flash VCC Standby
Current (RESET)
VCCf = VCC Max., RESET = VSS ± 0.3 V
——
5 µA
ISB1s
SRAM VCC Standby
Current
CE1s = VIH or CE2s = VIL
——
2 mA
VCCs =
3.0 V
±10%
TA = 25°C
TA = –20 to
+85°C
—1
2 µA
— — 35 µA
ISB2s**
SRAM VCC Standby
Current
CE1s = VCC –
0.2 V or CE2s
= 0.2 V
VCCs =
3.3 V
±0.3 V
TA = 25°C
TA = –20 to
+85°C
TA = 25°C
—2
3 µA
— — 40 µA
——
1 µA
VCCs =
3.0 V
TA = –20 to
+40°C
TA = –20 to
+85°C
——
3 µA
— — 30 µA
VIL Input Low Level
—
–0.3
—
0.6 V
VIH Input High Level
— 2.2 — VCC+0.3* V
VOL
Output Low Voltage
Level
IOL = 2.1 mA,
VCCf = VCCs = VCC Min.
— — 0.4 V
VOH
Output High Voltage
Level
IOH = –500 µA,
VCCf = VCCs = VCC Min.
VCC – 0.5
—
—V
VLKO
Flash Low VCC Lock-Out
Voltage
—
2.3 — 2.5 V
* : VCC indicate lower of VCCf or VCCs
** :During standby mode with CE1s = VCCS – 0.2 V, CE2s should be CE2s < 0.2V or CE2s > VCCS – 0.2V
11
11 Page | ||
| Páginas | Total 29 Páginas | |
| PDF Descargar | [ Datasheet MB84VA2006.PDF ] | |
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