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PDF T1235H Data sheet ( Hoja de datos )
| Número de pieza | T1235H | |
| Descripción | 12A TRIACS | |
| Fabricantes | ST Microelectronics | |
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®
SNUBBERLESS™ HIGH TEMPERATURE
T1235H Series
12A TRIACS
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
12
600
35
Unit
A
V
mA
A2
G
A1
A2
A2
DESCRIPTION
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee
machines...), the new 12 Amps T1235H triacs
provide an enhanced performance in terms of
power loss and thermal dissipation. This allows for
optimization of the heatsinking dimensioning,
leading to space and cost effectivness when
compared to electro-mechnical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip
assembly technique, they provide a superior
performance in surge current handling.
A1 A2
G
D2PAK
(T1235-G)
A1
A2
G
TO-220AB
(T1235-T)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IT(RMS)
ITSM
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
Tc = 135°C
F = 60 Hz
t = 16.7 ms
F = 50 Hz
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 150°C
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 150°C
Tj = 150°C
Value
12
145
140
112
50
700
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
April 2002 - Ed: 5A
1/7
1 page  
T1235H Series
Fig. 10: Leakage current versus junction
temperature for different values of blocking
voltage (typical values).
Fig. 11: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance.
IDRM/IRRM(mA)
1E+1
1E+0
1E-1
VD=VR=200V
VD=VR=400V
VD=VR=600V
1E-2
1E-3
50
Tj(°C)
75 100 125
VDRM/VRRM(V)
700
600
Tj=150°C
Rth(j-c)=1.2°C/W
500
400
300
200
100 Rth(c-a)(°C/W)
0
150 0 2 4 6 8 10 12 14 16 18 20
Fig. 12: D²PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W)
80
70
D²PAK
60
50
40
30
20
10 S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet T1235H.PDF ] | |
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