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IRL2703 Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IRL2703
Beschreibung HEXFET Power MOSFET
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 8 Seiten
IRL2703 Datasheet, Funktion
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PD - 9.1359
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
IRL2703
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.04
S ID = 24A
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
3.3
––––
62
To Order
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/96






IRL2703 Datasheet, Funktion
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IRL2703
Index
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VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
160
ID
TOP 5.7A
9 .9A
B OTTOM 14A
120
80
40
0 VDD = 15V
25 50
75
A
100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
4.5 V
QGS
VG
QG
QGD
Charge
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
To Order

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