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PDF STB7NK80Z Data sheet ( Hoja de datos )
| Número de pieza | STB7NK80Z | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STB7NK80Z, STB7NK80Z-1
STP7NK80ZFP, STP7NK80Z
N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
800V
800V
800V
800V
RDS(on)
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
ID
5.2A
5.2A
5.2A
5.2A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
STB7NK80ZT4
STB7NK80Z-1
STP7NK80Z
STP7NK80ZFP
B7NK80Z
B7NK80Z
P7NK80Z
P7NK80ZFP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape e reel
Tube
March 2010
Doc ID 8979 Rev 6
1/17
www.st.com
17
1 page  
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.2 A, VGS = 0
ISD = 5.2 A, di/dt = 100
A/µs
VDD = 50 V, Tj = 150°C
(see Figure 22)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Min. Typ. Max. Unit
5.2 A
-
20.8 A
- 1.6 V
530
- 3.31
12.5
ns
µC
A
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage IGS= ± 1mA (open drain) 30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 8979 Rev 6
5/17
5 Page 
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Package mechanical data
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 23. TO-220FP drawing
L7
mm
Typ.
16
A
B
Dia
L6
D
L5
F1 F2
H
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
L2
L3
Doc ID 8979 Rev 6
L4
7012510_Rev_K
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STB7NK80Z.PDF ] | |
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