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STB75NF75L Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer STB75NF75L
Beschreibung N-CHANNEL MOSFET
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 11 Seiten
STB75NF75L Datasheet, Funktion
STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009 - 75A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STB75NF75L/-1
STP75NF75L
75 V
75 V
<0.011
<0.011
s TYPICAL RDS(on) = 0.009
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
75 A
75 A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s DC MOTOR CONTROL
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Current limited by package
(••) Pulse width limited by safe operating area.
April 2002
.
Value
75
75
± 15
75
70
300
300
2
20
680
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 75A, di/dt 500A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V
1/11






STB75NF75L Datasheet, Funktion
STB75NF75L/-1 STP75NF75L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11

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