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PDF SIP41101 Data sheet ( Hoja de datos )
| Número de pieza | SIP41101 | |
| Descripción | Half-Bridge N-Channel MOSFET Driver With Break-Before-Make | |
| Fabricantes | Vishay Siliconix | |
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SiP41101
Vishay Siliconix
Half-Bridge N-Channel MOSFET Driver With Break-Before-Make
FEATURES
D 5-V Gate Drive
D Undervoltage Lockout
D Sub 1-W Gate Drivers
D Internal Bootstrap Diode
D Drive MOSFETs In 4.5- to 30-V Systems
D Switching Frequency: 250 kHz to 1 MHz
D Synchronous Enable/Disable Option
APPLICATIONS
D Multi-Phase DC/DC
D High Current Synchronous Buck Converters
D High Frequency Synchronous Buck Converters
D Asynchronous-to-Synchronous Adaptations
D Mobile Computer DC/DC Converters
D Desktop Computer DC/DC Converters
DESCRIPTION
The SiP41101 is a high speed half-bridge driver, with
make-before-break, for use in high frequency, high current
multiphase dc-to-dc power supplies for supply voltages as
high as 30 V. It is designed to operate at frequencies up to
1 MHz. The high-side driver is bootstrapped to allow driving an
n-channel high-side MOSFET. The bootstrap diode is internal.
The output drivers provide currents up to 4 A, allowing use of
low rDS(on) power MOSFETs.
The SiP41101 comes with internal break-before-make
circuitry to prevent shoot-through current in the external
TYPICAL APPLICATION DIAGRAM
+5 to 30 V
+5 V
MOSFETs. The SD control pin is provided to enable the
drivers. A Synchronous Enable control pin is provided to
disable the the low-side or synchronous MOSFET to
maximize efficiency under low output current conditions.
The SiP41101 is available in a 16-pin TSSOP package for
operation over the industrial temperature range of -40 to 85_C.
VDD
BOOT
Controller
OUTH
SiP41101
IN
SYNC_EN
SD
SH
OUTL
VOUT
GND
Document Number: 72377
S-31578—Rev. A, 11-Aug-03
GND
SL
GND
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FUNCTIONAL BLOCK DIAGRAM
VDD
Levelshift
SD Undervoltage
IN
Sync EN
GND
SiP41101
Vishay Siliconix
+
- VBBM
VDD
BOOT
OUTH
SH
OUTL
SL
Figure 2.
DETAILED OPERATION
Break-Before-Make Function
The SiP41101 has an internal break-before-make function to
ensure that both high-side and low-side MOSFETs are not
turned on at the same time. The high-side drive (OUTH) will not
turn on until the low-side gate drive voltage (measured at the
OUTL pin) is less than VBBM, thus ensuring that the low-side
MOSFET is turned off. The low-side drive (OUTL) will not turn
on until the voltage at the MOSFET half-bridge output
(measured at the SL pin) is less than VBBM, thus ensuring that
the high-side MOSFET is turned
Under Voltage Lockout Function
The SiP41101 has an internal under-voltage lockout feature to
prevent driving the MOSFET gates when the supply voltage (at
VDD) is less than the under-voltage lockout specification
(VUVL). This prevents the output MOSFETs from being turned
on without sufficient gate voltage to ensure they are fully on.
There is hysteresis included in this feature to prevent lockout
from cycling on and off.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
IDD Supply Current vs. Frequency
100
50
Rise and Fall Time vs. CLOAD
50
20
10
100
200 500
Frequency (kHz)
Document Number: 72377
S-31578—Rev. A, 11-Aug-03
1000
40
30
20
10
0
0.3
tr(OUTL)
tr(OUTH)
tf(OUTH)
tf(OUTL)
13
Load Capacitance (nF)
10
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SIP41101.PDF ] | |
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