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PDF TPCS8101 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8101 | |
| Descripción | Effect Transistor Silicon P Channel MOS Type (U-MOS II) | |
| Fabricantes | Toshiba Semiconductor | |
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TPCS8101
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8101
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Unit: mm
l Small footprint due to small and thin package
l Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
l High forward transfer admittance: |Yfs| = 12 S (typ.)
l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
l Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−30
−30
±20
−6
−24
1.5
0.6
46.8
−6
0.15
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
1 2003-02-20
1 page  
TPCS8101
2.0
1.6 (1)
1.2
0.8
(2)
0.4
PD – Ta
(1) DEVICE MOUNTED ON A
GLASS-EPOXY BOARD (a)
(NOTE 2a)
(2) DEVICE MOUNTED ON A
GLASS-EPOXY BOARD (b)
(NOTE 2b)
t = 10 s
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
5
2003-02-20
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8101.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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