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Teilenummer | IGB03N120H2 |
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Beschreibung | HighSpeed 2-Technology | |
Hersteller | Infineon Technologies | |
Logo | ||
Gesamt 13 Seiten IGP03N120H2,
IGW03N120H2
IGB03N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IGW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4596
IGP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4599
IGB03N120H2 1200V 3A 0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4598
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04
IGP03N120H2,
IGW03N120H2
IGB03N120H2
1000ns
100ns
td(off)
tf
10ns
td(on)
tr
1ns
0A 2A 4A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
1000ns
td(off)
100ns
10ns
tf
td(on)
1ns
0Ω
tr
50Ω
100Ω
150Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
1000ns
td(off)
100ns
tf
10ns
td(on)
tr
1ns
25°C 50°C 75°C 100°C 125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
5V
4V
3V max.
typ.
2V
m in.
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
Power Semiconductors
6
Rev. 2, Mar-04
6 Page IGP03N120H2,
IGW03N120H2
IGB03N120H2
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
(Diode)
L Cσ
Cr
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 4nF (only for
ZVT switching)
Power Semiconductors
12
Rev. 2, Mar-04
12 Page | ||
Seiten | Gesamt 13 Seiten | |
PDF Download | [ IGB03N120H2 Schematic.PDF ] |
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