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IRFP460 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer IRFP460
Beschreibung 500V, 20A, PowerMOS transistors Avalanche energy rated
Hersteller NXP Semiconductors
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Gesamt 7 Seiten
IRFP460 Datasheet, Funktion
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
IRFP460
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 20 A
RDS(ON) 0.27
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRFP460 is supplied in the
SOT429 (TO247) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
20
12.4
80
250
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
Unclamped inductive load, IAS = 20 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy1
VDD 50 V; RGS = 50 ; VGS = 10 V
IAR = 20 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
1300
32
20
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
September 1999
1
Rev 1.000






IRFP460 Datasheet, Funktion
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
IRFP460
MECHANICAL DATA
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
α
SOT429
E
P
q
S
A
A1
β
R
D
Y
L1(1)
b2
12
b
b1
ee
3
wM
L
Q
c
0 10 20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 b2 c
DE
e
L L1(1) P
Q
q
R
S
wY
α
β
mm
5.3
4.7
1.9
1.7
1.2 2.2 3.2
0.9 1.8 2.8
0.9
0.6
21
20
16 5.45 16
15 15
4.0 3.7
3.6 3.3
2.6
2.4
5.3
3.5
3.3
7.5
7.1
0.4
15.7
15.3
6°
4°
17°
13°
Note
1. Tinning of terminals are uncontrolled within zone L1.
OUTLINE
VERSION
SOT429
IEC
REFERENCES
JEDEC
EIAJ
TO-247
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-08-04
Fig.19. SOT429; pin 2 connected to mounting base
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
September 1999
6
Rev 1.000

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