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PDF MUN51xxDW1T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN51xxDW1T1 | |
| Descripción | Dual Bias Resistor Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN5111DW1T1/D
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with
Monolithic Bias Resistor Network
MUN5111DW1T1
SERIES
Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base–emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices
are housed in the SOT–363 package which is ideal for low–power surface mount
applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
65
4
123
CASE 419B–01, STYLE 1
SOT–363
(3) (2) (1)
R1 R2
Q1
R2 R1
(4) (5)
Q2
(6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Collector–Base Voltage
Collector–Emitter Voltage
VCBO
VCEO
– 50
–50
Collector Current
THERMAL CHARACTERISTICS
IC –100
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
RθJA
TJ, Tstg
PD
833
– 65 to +150
*150
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES
Device
Marking
R1 (K)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1(2)
MUN5116DW1T1(2)
MUN5130DW1T1(2)
MUN5131DW1T1(2)
MUN5132DW1T1(2)
MUN5133DW1T1(2)
MUN5134DW1T1(2)
MUN5135DW1T1(2)
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Unit
Vdc
Vdc
mAdc
°C/W
°C
mW
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1
1 page  
10
IC/IB = 10
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1
1000
VCE = 10 V
1 25°C
TA = –25°C
100
75°C
0.1
TA = 75°C
25°C
–25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
50
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
4 100
f = 1 MHz
75°C 25°C
3
lE = 0 V
TA = 25°C
10
TA = –25°C
1
2
0.1
1
0.01
VO = 5 V
0
0 10
20
30
40 50
0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page 
PACKAGE DIMENSIONS
MUN5111DW1T1 SERIES
A
G
V
654
S –B–
123
D 6 PL
C
0.2 (0.008) M B M
N
J
HK
CASE 419B–01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.031 0.043
D 0.004 0.012
G 0.026 BSC
H ––– 0.004
J 0.004 0.010
K 0.004 0.012
N 0.008 REF
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.80 1.10
0.10 0.30
0.65 BSC
––– 0.10
0.10 0.25
0.10 0.30
0.20 REF
2.00 2.20
0.30 0.40
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MUN51xxDW1T1.PDF ] | |
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