Datenblatt-pdf.com


STD16NE06 Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer STD16NE06
Beschreibung N-CHANNEL POWER MOSFET
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 9 Seiten
STD16NE06 Datasheet, Funktion
® STD16NE06
N - CHANNEL 60V - 0.07- 16A DPAK/IPAK
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
ID
STD16NE06
60 V < 0.085 16 A
s TYPICAL RDS(on) = 0.07
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”STripFET” strip-ba-
sed process.The resulting transistor shows extre-
mely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
turing reproducibility.
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM ()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
February 2000
Va l u e
Un it
60 V
60 V
± 20
V
16 A
11 A
64 A
40
0.26
W
W /o C
7 V/ns
-65 to 175
oC
175 oC
( 1) ISD 16 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/9






STD16NE06 Datasheet, Funktion
STD16NE06
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9

6 Page







SeitenGesamt 9 Seiten
PDF Download[ STD16NE06 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
STD16NE06N-CHANNEL POWER MOSFETST Microelectronics
ST Microelectronics
STD16NE06LN-CHANNEL POWER MOSFETST Microelectronics
ST Microelectronics
STD16NE06L-1N-CHANNEL POWER MOSFETST Microelectronics
ST Microelectronics

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche