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STD16NF06L Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer STD16NF06L
Beschreibung N-CHANNEL POWER MOSFET
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 11 Seiten
STD16NF06L Datasheet, Funktion
STD16NF06L
N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STD16NF06L
60 V < 0.070 24 A
TYPICAL RDS(on) = 0.060
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 1:Package
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
Figure 2: Internal Schematic Diagram
APPLICATIONS
SWITCHING APPLICATIONS
Table 2: Order Codes
SALES TYPE
STD16NF06LT4
STD16NF06L-1
MARKING
D16NF06L
D16NF06L
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
March 2005
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Value
60
60
± 18
24
17
96
40
0.27
11.5
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 16A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 20A, VDD= 48V
Rev. 3.0
1/11






STD16NF06L Datasheet, Funktion
STD16NF06L
Figure 15: Unclamped Inductive Load Test Circuit
Figure 16: Unclamped Inductive Waveform
Figure 17: Switching Times Test Circuits For Resis-
tive Load
Figure 18: Gate Charge test Circuit
Figure 19: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11

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