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Número de pieza | STD1LNC60 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STD1LNC60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STD1LNC60
N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK
PowerMESH™II MOSFET
TYPE
VDSS
RDS(on)
ID
STD1LNC60
600 V
< 15 Ω
1A
s TYPICAL RDS(on) = 12 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s BATTER CHARGER, ADAPTOR AND STAND-
BY POWER SUPPLY
3
2
1
IPAK
TO-251
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
February 2001
Value
600
600
± 30
1
0.63
4
30
0.24
3.5
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD ≤ 1A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
1 page STD1LNC60
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STD1LNC60.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD1LNC60 | N-CHANNEL POWER MOSFET | ST Microelectronics |
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