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PDF IRGPC40UD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGPC40UD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
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INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
PD - 9.808A
IRGPC40UD2
UltraFast CoPack IGBT
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
VCES = 600V
VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 20A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-717
TO-247AC
Max.
600
40
20
160
160
15
160
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.77
1.7
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGPC40UD2
3000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
2500
Cres = C gc
Coes = C ce + C gc
Cies
2000
Coes
1500
1000
Cres
500
0
1 10 100
V CE , C ollector-to-E m itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 20A
16
12
8
4
0
0 10 20 30 40 50
Q g , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
60
2.02
VCC = 480V
2.00
VGE = 15V
TC = 25°C
I C = 20A
1.98
1.96
1.94
1.92
1.90
1.88
1.86
0
10 20 30 40 50
RG, Gate Resistance (Ω)
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
IC = 40A
IC = 20A
1
IC = 10A
RG = 10Ω
VGE = 15V
0.1 VCC = 480V
-60 -40 -20 0
A
20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-721
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| PDF Descargar | [ Datasheet IRGPC40UD2.PDF ] | |
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