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PM10RSH120 Schematic ( PDF Datasheet ) - Mitsubishi

Teilenummer PM10RSH120
Beschreibung FLAT-BASE TYPE INSULATED PACKAGE
Hersteller Mitsubishi
Logo Mitsubishi Logo 




Gesamt 8 Seiten
PM10RSH120 Datasheet, Funktion
MITSUBISHI INTELLIGENT POWER MODULES
PM10RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
X
ST
F Y (15 TYP.)
V - DIA.
(4 TYP.)
AA
A
B
C
D
QP
PP
12 3 4
5678
9 11
13 15 17 19
10 12
14 16 18
U (4 TYP.)
PBNUVW
HG
NM M M M M
E
Z
2.0 ± 0.1 X 0.5 ± 0.1 MM PIN
(6 TYP.)
0.6 ± 0.1 X 0.4 ± 0.1 MM PIN
(19 TYP.)
L
R
W
1. VUPC
2. U FO
3. UP
4. VUPI
5. VVPC
6. VFO
7. VP
8. VVPI
9. V WPC
10. WFO
11. WP
12. VWPI
13. VNC
14. VNI
15. BR
16. UN
17. VN
18. WN
19. FO
20. P
21. B
22. N
23. U
24. V
25. W
J
K
TEMP
B N W V UP
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
Inches
3.98±0.04
3.78
3.48±0.03
2.700±0.03
2.66±0.02
2.36±0.04
1.85±0.02
1.83±0.03
1.28
0.97
0.71±0.04
0.53±0.01
Millimeters
101.0±1.0
96.0
88.5±0.8
68.58±0.8
67.5±0.5
60.0±1.0
47.0±0.5
46.5±0.8
32.6
24.6
18.0±1.0
13.5±0.3
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Z
AA
Inches
0.41
0.400
0.392
0.31
0.26
0.246
0.18 Rad.
0.18 Dia.
0.17±0.02
0.10
0.100±0.01
0.02
0.14
Millimeters
10.5
10.16
9.96
8.0
6.5
6.25
Rad. 4.5
Dia. 4.5
4.4±0.5
2.5
2.54±0.25
0.5
3.5
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
ٗ Complete Output Power
Circuit
ٗ Gate Drive Circuit
ٗ Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
ٗ Inverters
ٗ UPS
ٗ Motion/Servo Control
ٗ Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM10RSH120 is a 1200V,
10 Ampere Intelligent Power Mod-
ule.
Type
PM
Current Rating
Amperes
10
VCES
Volts (x 10)
120
Sep.1998






PM10RSH120 Datasheet, Funktion
MITSUBISHI INTELLIGENT POWER MODULES
PM10RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VD = 15V
VCIN
= 0V
Tj =
25oC
Tj = 125oC
5 10 15
COLLECTOR CURRENT, IC, (AMPERES)
20
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
101
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100
toff
ton
10-1
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
DIODE FORWARD CHARACTERISTICS
102
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
0
0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
3.0
2.5
2.0
1.5
1.0 IC = 50A
VCIN = 0V
Tj = 25oC
0.5 Tj = 125oC
0
0 12 14 16 18 20
SUPPLY VOLTAGE, VD, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
100
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
10-1
tc(off)
tc(on)
10-2
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
140
Tj = 25oC
120
100
80
60
0
0 12 14 16 18 20
SUPPLY VOLTAGE, VD, (VOLTS)
15.0
10.0
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25oC
VCIN = 0V
15
VD = 17V
13
5.0
0
0 1.0 2.0 3.0 4.0
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
103
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
102
102 trr
101
Irr
101
100
101
COLLECTOR CURRENT, IC, (AMPERES)
100
102
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
120
110
100
90
80
VD = 15V
0
-20 0 20 60 100 140
JUNCTION TEMPERATURE, Tj, (oC)
Sep.1998

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