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Teilenummer | IRFR9024N |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | IRF | |
Logo | ||
Gesamt 10 Seiten PRELIMINARY
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR9024N)
l Straight Lead (IRFU9024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD - 9.1506
IRFR/U9024N
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.175Ω
ID = -11A
S
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
6/26/97
IRFR/U9024N
VDS
L
RG
-20V
tp
D .U .T
IAS
0 .0 1Ω
D R IV E R
-+VDVDDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
120 ID
TOP
-3.0A
100 -4.2A
BOTTOM -6.6A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ, Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ IRFR9024N Schematic.PDF ] |
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