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Número de pieza | STD2NC40-1 | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STD2NC40-1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! STD2NC40-1
N-CHANNEL 400V - 4.7Ω - 1.5A IPAK
PowerMesh™ II MOSFET
TYPE
VDSS
RDS(on)
ID
STD2NC40-1
400V
<5.5Ω
1.5A
s TYPICAL RDS(on) = 4.7Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
IPAK
(SUFFIX“-1”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (s) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
400
400
±30
1.5
0.95
6
30
0.24
3.5
–60 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD ≤1.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
May 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/8
1 page Normalized Gate Threshold Voltage vs
Temperature
STD2NC40-1
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STD2NC40-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD2NC40-1 | N-CHANNEL MOSFET | ST Microelectronics |
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