Datenblatt-pdf.com


IRFP250A Schematic ( PDF Datasheet ) - Fairchild

Teilenummer IRFP250A
Beschreibung Advanced Power MOSFET
Hersteller Fairchild
Logo Fairchild Logo 




Gesamt 7 Seiten
IRFP250A Datasheet, Funktion
Advanced Power MOSFET
IRFP250A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.071 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 200 V
RDS(on) = 0.085
ID = 32 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
200
32
20.3
130
+_ 30
683
32
20.4
5.0
204
1.63
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Typ.
--
0.24
--
Max.
0.61
--
40
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation






IRFP250A Datasheet, Funktion
IRFP250A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
VGS Driver
RG
VGS
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

6 Page







SeitenGesamt 7 Seiten
PDF Download[ IRFP250A Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
IRFP250N-Channel Power MosfetsSamsung semiconductor
Samsung semiconductor
IRFP250N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
IRFP250N-Channel Power MOSFET / TransistorFairchild
Fairchild
IRFP250N-Channel Power MosfetsSamsung
Samsung
IRFP250N-CHANNEL MOSFET0ST Microelectronics
ST Microelectronics

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche