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MC33170 Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer MC33170
Beschreibung RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal
Hersteller ON Semiconductor
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Gesamt 16 Seiten
MC33170 Datasheet, Funktion
MC33170
RF Amplifier Companion Chip
for Dual-Band Cellular
Subscriber Terminal
The MC33170 is a complete solution for drain modulated
dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers.
Thanks to its internal decoder, the MC33170 drastically simplifies the
interface between the PAs and the baseband logic section, providing
an immediate gain in part count but also in occupied copper area. The
device is also ready for 1V platforms since it accepts logic high control
signals down to 900mV@25°C.
A priority management system ensures the negative is present
before authorizing the power modulation, giving the necessary
ruggedness to the final design. This function can easily be disabled for
PAs not requiring a negative bias.
The device is able to directly drive an external P or N–channel with
the possibility to linearize the overall response via the internal
high–performance control amplifier and easily implement system
gain.
Finally, an LDO delivers a stable voltage, usable for external biasing
purposes.
1V platform compatible: ON voltage = 900mV, OFF voltage =
300mV max
Priority management system prevents power modulation before
negative bias establishes
High performance 4.5MHz gain–bandwidth product operational
amplifier
Drives N or P–channel MOSFET
2.5V low–noise LDO
Idle mode input for very low power consumption (standby mode)
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14
1
TSSOP–14
DTB SUFFIX
CASE 948G
PIN CONNECTIONS
Band Selection 1
Tx Enable 2
GSM-900 3
DCS-1800 4
PA Start-up 5
Gnd 6
Vbat 7
14 Common Enable
13
Negative
Regulator
12 Out
11 Vboost
10 INV
9 NINV
8 LDO
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
MC33170DTB TSSOP–14 96 Units / Rail
MC33170DTBR2 TSSOP–14 2500 / Tape & Reel
LDO
Output 8
Shutdown
2.5 V
2.5 V
Low Dropout
2.5 V
Vbat
NINV Vboost Vbat (5.5 V Max)
9 11
7
Shutdown
Common
Enable 14
TX
Enable
Band
Selection
2
1
Open–Collector BG
Decoder BD
BG
1 mA
Continuous
700 mA
Peak
50 mA
NEGOK?
3 4 Continuous 5
GSM–900 DCS–1800 PA Start–Up
Clip
to –5 V
+
-
13 10
Negative INV
Regulator
6
12
Out
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1
1
Publication Order Number:
MC33170/D






MC33170 Datasheet, Funktion
MC33170
TYPICAL OPERATING CHARACTERISTICS
900
800
700
600 BAND
TxEn
500
400 CE
300
200
100
0
-40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 1. TxEn, BAND, CE Logic Level with Temperature
2.502
2.500
ILDOout = 5mA
2.498
2.496
ILDOout = 10mA
2.494
2.492
2.490
2.488
-50
0 50 100
TEMPERATURE (°C)
Figure 2. LDO Voltage Output Variation with
Temperature
150
2.55 140
2.53
2.51
2.49
VLDOout @ Vbat = 3.6V, 25°C
2.47
120 Dropout = 10mA
100
80
Dropout = 5mA
60
40
Dropout = 1mA
20
2.45
0
24
6 8 10 12 14 16
ILDOout (mA)
Figure 3. LDO Output Voltage versus LDO Output
Current @ 25°C
0
-40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 4. LDO Dropout versus ILDOout Current @ 25°C
1600
1400
1200
1000
800
600
400
200
0
-40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 5. Quiescent Current versus Temperature
3.0
2.0
1.0 Negative Neg-Reg Threshold
0
-1.0
-2.0
-3.0
-4.0
-5.0
-40 -20
Positive Neg-Reg Threshold
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 6. Neg–Reg Thresholds versus Temperature
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MC33170 pdf, datenblatt
MC33170
MC33170 as a Bessel filter
Thanks to its package, the MC33170 simplifies the
implementation of any filtering/driving configuration, e.g.
with either an N or P–channel MOSFET. Figure 15a details
the way to wire a 100kHz filter while driving an N–channel
MOSFET. In this application, a third order filter is achieved
by combining a first pole passive RC–filter, followed by a
second–order Sallen–Key complex pole–pair section.
Vboost
Vbattery
Input
1k
19.88 k
680 pF
108.4 k
22 pF
33 pF 11
+
9
-
10
MC33170
OPAMP Section
12
6
10 pF
100 k
100 k
MTSF3N02HD
To Power
Amplifier’s Drain
Figure 15a. Using the MC33170’s OPAMP to filter out the DAC discontinuities
As one can see, it is easy to select the desired gain value
via the 100k feedback resistors and accordingly tailor it to
the DAC output level. Figure 15a performs the filtering
function but also delivers the adequate sink/source current
to drive the MOSFET transistor. The two–component
section of figure 2 is reduced into a single one, saving cost
and PCB area. It also important to point out that the OPAMP
section can be totally disabled by the Common Enable pin.
Benefits of the closed loop configuration
One of the MC33170’s key applications is to make the
modulation section operating in a closed–loop
configuration. That is to say, the power chain is closed
through the feedback resistor (the 100kW network in
figure 3) and forces the output to follow the input ramp.
With N–channels, it brings several benefits:
1. The input ramp does no longer deals with the MOSFET
threshold voltage which can introduce a certain amount of
delay in the response time.
2. At low powers, the distributions between the RDS(ON)
is automatically compensated.
With P–channels, the application does not need an
elevated voltage to ensure the channel enhancement but
maximizes the presence of the OPAMP to ensure a fully
linear chain.
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